• DocumentCode
    1006583
  • Title

    Threshold modelling of MOSFETs for CAD of CMOS-VLSI

  • Author

    Wright, G.T.

  • Author_Institution
    University of Birmingham, Electronic & Electrical Engineering Department, Birmingham, UK
  • Volume
    21
  • Issue
    6
  • fYear
    1985
  • Firstpage
    223
  • Lastpage
    224
  • Abstract
    A simple model is proposed to describe threshold and weak-inversion operation of the enhancement-mode MOSFET. The model has been tested against two-dimensional numerical simulations and gives accurate descriptions of transistor characteristics. The model possesses continuity of current and derivatives and is suitable for the CAD of low-voltage low-power CMOS integrated circuits.
  • Keywords
    CMOS integrated circuits; VLSI; insulated gate field effect transistors; semiconductor device models; CAD; CMOS-VLSI; continuity of current; enhancement-mode MOSFET; low-power CMOS integrated circuits; threshold modelling; two-dimensional numerical simulations; weak-inversion operation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19850158
  • Filename
    4250979
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1006583