DocumentCode :
1006714
Title :
20 GHz active mode-locking of a 1.55 μm InGaAsP laser
Author :
Tucker, Rodney ; Korotky, Steven K. ; Eisenstein, Gadi ; Koren, U. ; Stulz, L.W. ; Veselka, J.J.
Author_Institution :
AT&T Bell Laboratories, Crawford Hill Laboratory, Holmdel, USA
Volume :
21
Issue :
6
fYear :
1985
Firstpage :
239
Lastpage :
240
Abstract :
Active mode-locking of a 1.55 μm wavelength InGaAsP laser at repetition rates up to 20 GHz is reported. The pulsewidth is 5 ps at 20 GHz, with a peak pulse power of 18 mW coupled into a single-mode output fibre.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; laser mode locking; semiconductor junction lasers; III-V semiconductors; InGaAsP laser; active mode-locking; peak pulse power; pulsewidth 5 ps; repetition rates 20 GHz; single-mode output fibre; wavelength 1.55 micron;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19850171
Filename :
4250992
Link To Document :
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