Title :
Single-chip, widely-tunable 10 Gbit/s photocurrent-driven wavelength converter incorporating a monolithically integrated laser transmitter and optical receiver
Author :
Sysak, M.N. ; Raring, J.W. ; Barton, J.S. ; Dummer, M. ; Tauke-Pedretti, Anna ; Poulsen, H.N. ; Blumenthal, D.J. ; Coldren, L.A.
Author_Institution :
Electr. & Comput. Eng. Dept., Univ. of California, Santa Barbara, CA, USA
fDate :
5/25/2006 12:00:00 AM
Abstract :
A single-chip photocurrent-driven wavelength converter operating at 10 Gbit/s is presented. The device consists of a monolithically integrated widely tunable transmitter and an optical receiver. The transmitter consists of a sampled grating DBR laser, electroabsorption modulator and semiconductor optical amplifier (SOA). The optical receiver includes a quantum-well pin photodetector and a set of two SOA preamplifiers. Bit error rate measurements at 10 Gbit/s with a 2/sup 31/-1 PRBS showed less than 1 dB of power penalty for conversion between 1550 nm and output wavelengths ranging from 1531 to 1563 nm.
Keywords :
electroabsorption; error statistics; optical receivers; optical transmitters; optical wavelength conversion; p-i-n photodiodes; photodetectors; quantum well devices; semiconductor optical amplifiers; 10 Gbit/s; 1531 to 1563 nm; SOA preamplifiers; bit error rate measurements; electro absorption modulator; monolithically integrated laser transmitter; optical receiver; photocurrent-driven wavelength converter; quantum-well pin photodetector; sampled grating DBR laser; semiconductor optical amplifier;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20060621
