Title :
High current gain InGaN/GaN HBTs with 300/spl deg/C operating temperature
Author :
Keogh, D.M. ; Asbeck, P.M. ; Chung, Taeyoung ; Limb, J. ; Yoo, D. ; Ryou, J.-H. ; Lee, W. ; Shen, S.-C. ; Dupuis, R.D.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California San Diego, CA, USA
fDate :
5/25/2006 12:00:00 AM
Abstract :
High current gain InGaN base heterojunction bipolar transistors (HBTs) with a graded emitter design are presented. The devices show incremental current gain values above 30, and low offset and knee voltages of approximately 2-3 and 5-6 V, respectively. Device operation was demonstrated at temperatures as high as 300/spl deg/C.
Keywords :
III-V semiconductors; gallium compounds; heterojunction bipolar transistors; indium compounds; wide band gap semiconductors; 2 to 3 V; 300 C; 5 to 6 V; HBT; InGaN-GaN; graded emitter design; heterojunction bipolar transistors; high current gain transistors; knee voltages; offset voltage;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20060333
