Title :
SiGe HMODFET "KAIST" micropower model and amplifier realization
Author :
Vilches, Antonio ; Fobelets, Kristel ; Michelakis, Kostis ; Despotopoulos, Solon ; Papavassiliou, Christos ; Hackbarth, Thomas ; König, Ulf
Author_Institution :
Dept. of Electr. & Electron. Eng., Imperial Coll. London, UK
fDate :
6/1/2004 12:00:00 AM
Abstract :
The recently published small-signal KAIST model is used successfully to fit the measured RF characteristics of a novel SiGe n-HMODFET device operating at micropower levels and extracted small-signal model parameters for this device under micropower operation are presented here for the first time. This model is then used to predict the performance of a simple micropower amplifier (sub 300-μW total power consumption), realized in SiGe technology, and a comparison of modeled versus measured data is included.
Keywords :
Ge-Si alloys; HEMT circuits; radiofrequency amplifiers; semiconductor device models; silicon; 300 muW; HMODFET; KAIST micropower model; RF characteristics; SiGe-Si; power consumption; small signal model; Data mining; Energy consumption; Germanium silicon alloys; Power amplifiers; Power measurement; Predictive models; Radio frequency; Radiofrequency amplifiers; Silicon germanium; Time measurement; MODFET; Micropower; SiGe; modeling;
Journal_Title :
Circuits and Systems I: Regular Papers, IEEE Transactions on
DOI :
10.1109/TCSI.2004.829242
