Title :
High-efficiency Ka- and Ku-band MESFET oscillators
Author_Institution :
Philips Research Laboratories, Redhill, UK
Abstract :
A relationship between GaAs MESFET oscillator efficiency and power and basic device characteristics is given. This has been confirmed by measurements on 16.8 and 28.5 GHz experimental designs, which have demonstrated efficiencies of 28 and 17.6%, respectively.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; microwave oscillators; solid-state microwave circuits; 16.8 GHz; 28.5 GHz; GaAs; III-V semiconductors; Ka-band; Ku-band MESFET oscillators; SHF; device characteristics; efficiency; power; solid-state microwave circuits;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850181
