Title :
High-efficiency monolithic GaAs IMPATT diodes
Author :
Bayraktaroglu, B. ; Shih, H.-D.
Author_Institution :
Texas Instruments Incorporated, Central Research Laboratories, Dallas, USA
Abstract :
Impedance-matching circuits were integrated on the same chip as the IMPATT diodes to produce monolithic impatt diodes for millimetre-wave applications. A drastic reduction of device-to-circuit parasitic elements was achieved by placing the external circuitry very close to the device. Oscillators fabricated in this fashion gave the highest efficiencies reported so far in the 30¿35 GHz range with 28% conversion efficiency using hybrid-Read structures.
Keywords :
III-V semiconductors; IMPATT diodes; gallium arsenide; impedance matching; microwave oscillators; monolithic integrated circuits; MM-wave applications; conversion efficiency 28%; frequency range 30 to 35 GHz; hybrid-Read structures; impedance matching circuits; monolithic GaAs IMPATT diodes; oscillators; parasitic elements;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850184
