• DocumentCode
    1006865
  • Title

    High-efficiency monolithic GaAs IMPATT diodes

  • Author

    Bayraktaroglu, B. ; Shih, H.-D.

  • Author_Institution
    Texas Instruments Incorporated, Central Research Laboratories, Dallas, USA
  • Volume
    21
  • Issue
    7
  • fYear
    1985
  • Firstpage
    259
  • Lastpage
    260
  • Abstract
    Impedance-matching circuits were integrated on the same chip as the IMPATT diodes to produce monolithic impatt diodes for millimetre-wave applications. A drastic reduction of device-to-circuit parasitic elements was achieved by placing the external circuitry very close to the device. Oscillators fabricated in this fashion gave the highest efficiencies reported so far in the 30¿35 GHz range with 28% conversion efficiency using hybrid-Read structures.
  • Keywords
    III-V semiconductors; IMPATT diodes; gallium arsenide; impedance matching; microwave oscillators; monolithic integrated circuits; MM-wave applications; conversion efficiency 28%; frequency range 30 to 35 GHz; hybrid-Read structures; impedance matching circuits; monolithic GaAs IMPATT diodes; oscillators; parasitic elements;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19850184
  • Filename
    4251006
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1006865