DocumentCode
1006888
Title
Improved very-high-speed packaged InGaAs PIN punch-through photodiode
Author
Burrus, C.A. ; Bowers, John E. ; Tucker, Rodney
Author_Institution
AT&T Bell Laboratories, Crawford Hill Laboratories, Holmdel, USA
Volume
21
Issue
7
fYear
1985
Firstpage
262
Lastpage
263
Abstract
We describe the fabrication and characterisation of an improved, coaxially packaged, back-illuminated mesa PIN photodetector utilising an InGaAs absorbing layer on an InP substrate. The measured 3 dB bandwidth is 22 GHz.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; photodetectors; photodiodes; InGaAs PIN punch-through photodiode; InGaAs absorbing layer; InP substrate; bandwidth 22 GHz; characterisation; coaxial packaging; fabrication; mesa PIN photodetection;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19850186
Filename
4251008
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