DocumentCode
1007088
Title
Effect of magnetic field on n+nn+ GaAs ballistic diode
Author
Tiwari, S.C.
Author_Institution
Banaras Hindu University, Applied Physics Section, Institute of Technology, Varanasi, India
Volume
21
Issue
7
fYear
1985
Firstpage
286
Lastpage
287
Abstract
The AC impedance of a ballistic diode under a transverse magnetic field shows distinct behaviour depending on the cyclotron frequency. An equivalent lumped parameter RLC representation is obtained.
Keywords
III-V semiconductors; electric impedance; gallium arsenide; semiconductor device models; semiconductor diodes; AC impedance; cyclotron frequency; equivalent lumped parameter RLC representation; magnetic field; n+ nn+ GaAs ballistic diode; velocity overshoot phenomena;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19850205
Filename
4251027
Link To Document