Title :
Improved high-temperature performance of 1.52 (¿m InGaAsP laser diodes fabricated by two-step VPE and LPE
Author :
Kato, Yu ; Yanase, T. ; Kitamura, Masayuki ; Nishi, Kentaro ; Yamaguchi, Masaki ; Nishimoto, H. ; Mito, I. ; Lang, Richard
Author_Institution :
NEC Corporation, Opto-Electronics Research Laboratories, Kawasaki, Japan
Abstract :
Continuous-wave operation up to 115°C has been achieved in 1.52 ¿m InGaAsP double-channel planar-buried-heterostructure laser diodes using two-step VPE and LPE. The high-temperature operation has been found attributable to the reduction in the leakage current bypassing the active region.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; liquid phase epitaxial growth; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 1.52 microns; CW operation; InGaAsP laser diodes; LPE; VPE; active region; double channel planar BH laser diodes; high-temperature performance; leakage current; semiconductor laser; two step epitaxial growth;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850210
