Title :
GaInAsP/InP surface emitting laser (λ = 1.4 μm, 77 K) with heteromultilayer Bragg reflector
Author :
Chailertvanitkul, A. ; Iga, K. ; Moriki, K.
Author_Institution :
Tokyo Institute of Technology, Yokohama, Japan
Abstract :
50 layers of GaInAsP/InP heteromultistructure with one quarter-wavelength thickness have been fabricated by computer-controlled rotational LPE. The measured reflectivity of the Bragg reflector was 82% at λ = 1.4 μm. The application of the multilayer as a reflector to a surface-emitting laser is demonstrated and a first GaInAsP/InP surface-emitting laser (λ = 1.4 μm) with a heteromultilayer Bragg reflector has been realised. The pulsed threshold current was 120 mA at 77 K and single-wavelength oscillation has been achieved.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; liquid phase epitaxial growth; semiconductor growth; semiconductor junction lasers; GaInAsP/InP heteromultistructure; GaInAsP/InP surface emitting laser; computer-controlled rotational LPE; heteromultilayer Bragg reflector; pulsed threshold current 1.4 microns; reflectivity; semiconductor laser; single-wavelength oscillation; wavelength 1.4 microns;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850216
