Title :
Novel high-speed In0.53 Ga0.47As/InP lateral phototransistor
Author :
Chand, Naresh ; Houston, P.A. ; Robson, P.N.
Author_Institution :
University of Sheffield, Department of Electronic & Electrical Engineering, Sheffield, UK
Abstract :
A novel structure for a very small area In0.53 Ga0.47As/InP phototransistor on a semi-insulating InP substrate is proposed for single-mode fibre optic communication applications. An optical gain of 38 at 64 ¿W incident power was measured on the first batch of unoptimised devices. The emitter-base and base-collector junction areas were 50 and 100 ¿m2 respectively. Pulse response measurements using a picosecond dye laser indicated a rise time of 100 ps and a FWHM of 180 ps.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical communication equipment; photodetectors; phototransistors; FWHM 180 ps; In0.53Ga0.47As/InP phototransistor; base-collector junction areas; emitter base junction area; integrated optics; optical gain; photodetector; pulse response; rise time 100 ps; single-mode fibre optic communication applications;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850220
