Title :
Low-threshold operation of 1.54 μm InGaAsP/InP DFB laser with second-order grating
Author :
Wakao, K. ; Kihara, K. ; Tanahashi, Toshiyuki ; Sudo, H. ; Kusunoki, Takashi ; Tabuchi, H. ; Ishikawa, Hiroshi ; Isozumi, S. ; Yamakoshi, Shigenobu ; Imai, H.
Author_Institution :
Fujitsu Laboratories Ltd., Atsugi, Japan
Abstract :
Threshold current has been reduced to 22-35 mA for 1.54 μm InGaAsP/InP distributed feedback (DFB) lasers with second-order grating, and single-longitudinal-mode operation at an output power of 5 mW has been achieved up to 90°C.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; semiconductor junction lasers; 1.54 microns wavelength; III-V semiconductors; InGaAsP/InP DFB laser; output power; second-order grating; semiconductor junction lasers; single-longitudinal-mode operation; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850227
