• DocumentCode
    1007311
  • Title

    Low-threshold operation of 1.54 μm InGaAsP/InP DFB laser with second-order grating

  • Author

    Wakao, K. ; Kihara, K. ; Tanahashi, Toshiyuki ; Sudo, H. ; Kusunoki, Takashi ; Tabuchi, H. ; Ishikawa, Hiroshi ; Isozumi, S. ; Yamakoshi, Shigenobu ; Imai, H.

  • Author_Institution
    Fujitsu Laboratories Ltd., Atsugi, Japan
  • Volume
    21
  • Issue
    8
  • fYear
    1985
  • Firstpage
    321
  • Lastpage
    322
  • Abstract
    Threshold current has been reduced to 22-35 mA for 1.54 μm InGaAsP/InP distributed feedback (DFB) lasers with second-order grating, and single-longitudinal-mode operation at an output power of 5 mW has been achieved up to 90°C.
  • Keywords
    III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; semiconductor junction lasers; 1.54 microns wavelength; III-V semiconductors; InGaAsP/InP DFB laser; output power; second-order grating; semiconductor junction lasers; single-longitudinal-mode operation; threshold current;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19850227
  • Filename
    4251050
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1007311