DocumentCode
1007336
Title
Improving electrical performance of Cu/porous ultra-low k dielectrics single damascene lines
Author
Yang, L.Y. ; Zhang, D.H. ; Li, C.Y. ; Wu, S.Y. ; Foo, P.D.
Author_Institution
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Volume
40
Issue
12
fYear
2004
fDate
6/10/2004 12:00:00 AM
Firstpage
729
Lastpage
730
Abstract
An additional dielectric barrier layer SiCN was deposited on the sidewalls prior to Ta(N) metal barrier deposition. It was found that the leakage decreased with three to four orders of magnitude and breakdown voltage increased 200% compared with that without SiCN layer after burn-in at 200°C for 40 h.
Keywords
chemical vapour deposition; copper; dielectric losses; dielectric materials; dielectric thin films; electric breakdown; electric resistance; interconnections; metallisation; porous materials; silicon compounds; thermal stability; 200 degC; 40 h; Cu; Si; SiCN; SiCN dielectric barrier layer; chemical vapour deposition; dielectric breakdown; dielectric losses; dielectric materials; electric resistance; metal barrier deposition; porous materials; thermal stability; ultra-low k dielectrics;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20040519
Filename
1305468
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