• DocumentCode
    1007342
  • Title

    1.3 μm InGaAsP index-guided multirib waveguide laser array

  • Author

    Dutta, N.K. ; Cella, T. ; Napholtz, S.G. ; Craft, D.C.

  • Author_Institution
    AT&T Bell Laboratories, Murray Hill, USA
  • Volume
    21
  • Issue
    8
  • fYear
    1985
  • Firstpage
    326
  • Lastpage
    327
  • Abstract
    Phase-locked InGaAsP index-guided multirib waveguide laser arrays emitting at 1.3 μm have been fabricated. These devices have threshold currents in the range 400-500 mA at 30°C and have been operated to pulsed output powers as high as 400 mW. More than 100 mW of output power has been obtained up to an ambient temperature of 60°C. The lasers emit in multilongitudinal modes with a far-field divergence of 20° × 40°.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; laser modes; semiconductor junction lasers; 1.3 microns wavelength; III-V semiconductors; InGaAsP; ambient temperature; far-field divergence; index-guided multirib waveguide; laser arrays; multilongitudinal modes; pulsed output powers; semiconductor junction lasers; threshold currents;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19850230
  • Filename
    4251053
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1007342