Title :
Double heterojunction GaAs/GaAlAs I2L inverter
Author :
Narozny, P. ; Beneking, H.
Author_Institution :
Aachen Technical University, Institute of Semiconductor Electronics, Aachen, West Germany
Abstract :
GaAs/GaAlAs double heterojunction I2L inverters with a vertical pnp current source were fabricated by ion implantation and Zn-diffusion into LPE structures. The current gain of the upside-down-operated double heterojunction npn transistor has been improved by a factor of two compared to the gain of the npn transistor of the otherwise similar structure. In addition, the wide-gap junction pnp transistor gives a solution to the critical switch-on problem which can occur when a wide-gap emitter transistor is used for the switching transistor.
Keywords :
III-V semiconductors; aluminium compounds; bipolar integrated circuits; gallium arsenide; integrated injection logic; integrated logic circuits; GaAs/GaAlAs; I2L inverter; III-V semiconductors; Zn-diffusion; critical switch-on problem; current gain; double heterojunction; upside-down-operated double heterojunction npn transistor; vertical pnp current source; wide-gap junction pnp transistor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850232
