Title :
High-power 2.3 μm laser arrays emitting 10 W CW at room temperature
Author :
Belenky, G.L. ; Kim, J.G. ; Shterengas, L. ; Gourevitch, A. ; Martinelli, R.U.
Author_Institution :
State Univ. of New York, Stony Brook, NY, USA
fDate :
6/10/2004 12:00:00 AM
Abstract :
High-power 2.3 μm In(Al)GaAsSb/GaSb type-I double quantum-well diode laser arrays have been fabricated and characterised. Linear laser arrays with 19 100 μm-wide elements on a 1 cm-long bar generated 10 W in continuous-wave (CW) mode and 18.5 W in quasi-CW mode (30 μs/300 Hz) at a heatsink temperature of 18°C.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser modes; quantum well lasers; semiconductor laser arrays; 1 cm; 10 W; 100 micron; 18 degC; 18.5 W; 2.3 micron; 293 to 298 K; 30 mus; 300 Hz; AlGaAsSb-GaSb; CW mode; InGaAsSb-GaSb; continuous wave mode; heatsink; molecular beam epitaxial growth; quantum well diode laser arrays; room temperature; semiconductor growth; semiconductor laser arrays;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20040532
