DocumentCode :
1007411
Title :
A new traveling wave matching structure for enhancing the bandwidth of MMIC broadband amplifiers
Author :
Gao, Huai ; Chatchaikarn, Aroonchat ; Yang, Li-wu ; Li, G.P.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Irvine, CA, USA
Volume :
15
Issue :
8
fYear :
2005
Firstpage :
508
Lastpage :
509
Abstract :
Three artificial transmission line sections followed by an input emitter follower buffer are used for constructing a new traveling wave matching structure to enhance the bandwidth of broadband amplifiers. An InGaP HBT MMIC broadband amplifier with 20-mW dc power consumption and a flat gain of 7.5dB over a frequency range from 30kHz to 23GHz is demonstrated.
Keywords :
III-V semiconductors; MMIC amplifiers; bipolar MMIC; buffer circuits; distributed amplifiers; gallium compounds; heterojunction bipolar transistors; indium compounds; low-power electronics; travelling wave amplifiers; wideband amplifiers; 20 mW; 30 kHz to 23 GHz; 7.5 dB; InGaP; InGaP HBT MMIC; MMIC broadband amplifiers; artificial transmission line section; distributed amplifiers; input emitter follower buffer; low power consumption; traveling wave matching structure; Bandwidth; Broadband amplifiers; Distributed parameter circuits; Energy consumption; Frequency; Gain; Heterojunction bipolar transistors; Impedance; MMICs; Power transmission lines; Broadband amplifiers; InGaP HBT MMIC; distributed amplifiers (DAs); low power consumption;
fLanguage :
English
Journal_Title :
Microwave and Wireless Components Letters, IEEE
Publisher :
ieee
ISSN :
1531-1309
Type :
jour
DOI :
10.1109/LMWC.2005.852783
Filename :
1471726
Link To Document :
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