A new traveling wave matching structure for enhancing the bandwidth of MMIC broadband amplifiers

Author

Gao, Huai ; Chatchaikarn, Aroonchat ; Yang, Li-wu ; Li, G.P.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Irvine, CA, USA

Volume

15

Issue

8

fYear

2005

Firstpage

508

Lastpage

509

Abstract

Three artificial transmission line sections followed by an input emitter follower buffer are used for constructing a new traveling wave matching structure to enhance the bandwidth of broadband amplifiers. An InGaP HBT MMIC broadband amplifier with 20-mW dc power consumption and a flat gain of 7.5dB over a frequency range from 30kHz to 23GHz is demonstrated.

Keywords

III-V semiconductors; MMIC amplifiers; bipolar MMIC; buffer circuits; distributed amplifiers; gallium compounds; heterojunction bipolar transistors; indium compounds; low-power electronics; travelling wave amplifiers; wideband amplifiers; 20 mW; 30 kHz to 23 GHz; 7.5 dB; InGaP; InGaP HBT MMIC; MMIC broadband amplifiers; artificial transmission line section; distributed amplifiers; input emitter follower buffer; low power consumption; traveling wave matching structure; Bandwidth; Broadband amplifiers; Distributed parameter circuits; Energy consumption; Frequency; Gain; Heterojunction bipolar transistors; Impedance; MMICs; Power transmission lines; Broadband amplifiers; InGaP HBT MMIC; distributed amplifiers (DAs); low power consumption;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2005.852783

Filename

1471726