Title :
Long wavelength MOCVD grown InGaAsN-GaAsN quantum well lasers emitting at 1.378-1.41 μm
Author :
Yeh, J.Y. ; Tansu, N. ; Mawst, L.J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Wisconsin-Madison, Madison, WI, USA
fDate :
6/10/2004 12:00:00 AM
Abstract :
Low threshold InGaAsN QW lasers with lasing wavelength at 1.378 and 1.41 μm were demonstrated by metal organic chemical vapour deposition (MOCVD). The threshold current densities are 563 and 1930 A/cm2 for the 1.378 and 1.41 μm emitting lasers, respectively. The significant improvement of device performance is believed due to utilisation of high temperature annealing and introduction of GaAsN barriers to suppress the resulting wavelength blue shift. A comparable characteristic temperature coefficient of the external differential quantum efficiency, T1, is observed for the InGaAsN-GaAsN QW laser compared to similar InGaAsN/GaAs structures.
Keywords :
III-V semiconductors; MOCVD; annealing; current density; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; semiconductor growth; spectral line shift; wide band gap semiconductors; 1.378 micron; 1.41 micron; InGaAsN-GaAsN; MOCVD grown InGaAsN-GaAsN quantum well lasers; differential quantum efficiency; high temperature annealing; metal organic chemical vapour deposition; temperature coefficient; threshold current densities; wavelength blue shift;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20040474
