1-µm bubble ion-implanted devices with two-level ion-implanted layers between propagation tracks

A new kind of 1-μm bubble device with two ion-implanted layers between propagation tracks has been studied. The ion-implanted layer in the center between two adjacent propagation tracks is thinner than that in the vicinity of the propagation track edge, where bubbles adhere. The unimplanted area is produced by the use of both photoresist and Mo masks to stop the ions, whereas the thinner implanted layer is produced by the use of the thin Mo mask alone. The ion-implantation mask-making for fabricating two ion-implanted layers is achieved with a gas plasma etch procedure. This structure makes it possible to scale down a loop period and create a circuit of high density. Reliable propagation margins for minor loops with 4 × 3 μm cell sizes can be obtained.