DocumentCode :
1007619
Title :
AlGaAsSb/InGaAsSb phototransistors for spectral range around 2 μm
Author :
Sulima, O.V. ; Refaat, T.F. ; Mauk, M.G. ; Cox, J.A. ; Li, J. ; Lohokare, S.K. ; Abedin, M.N. ; Singh, U.N. ; Rand, J.A.
Author_Institution :
AstroPower Inc., Newark, DE, USA
Volume :
40
Issue :
12
fYear :
2004
fDate :
6/10/2004 12:00:00 AM
Firstpage :
766
Lastpage :
767
Abstract :
The first AlGaAsSb/InGaAsSb phototransistors sensitive in the 2.0-2.1 μm spectral range are reported. These phototransistors exhibited both high gain and relatively low noise, and a record 2 μm detectivity of 3.9×1011 cmHz12//W was obtained at -20°C, which is equivalent to a noise-equivalent-power of 4.6×10-14 W/Hz12/.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; infrared detectors; phototransistors; semiconductor device noise; -20 degC; 2 to 2.1 micron; AlGaAsSb-InGaAsSb; high-gain phototransistors; mid-infrared detectors; noise equivalent power;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20040422
Filename :
1305492
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1007619
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