DocumentCode
1007660
Title
Behaviour of logic gates fabricated on Si/SiGe MODFET technology
Author
Juncu, V.D. ; Kallfass, I. ; Sloan, R. ; Hatfield, J V
Author_Institution
Dept. of Electr. Eng. & Electron., Univ. of Manchester Inst. of Sci. & Technol., UK
Volume
40
Issue
12
fYear
2004
fDate
6/10/2004 12:00:00 AM
Firstpage
772
Lastpage
774
Abstract
The behaviour of two fabricated logic gates using n-type Si/SiGe MODFETs is reported. S-parameter measurements show that the voltage separation between states at 20 GHz is 15 dB for the NAND gate and 8 dB for the NOR gate. The measured DC levels of the outputs allow the possibility of cascading the gates for use in more complex circuits.
Keywords
Ge-Si alloys; HEMT integrated circuits; S-parameters; elemental semiconductors; integrated logic circuits; logic gates; silicon; 15 dB; 20 GHz; 8 dB; DC levels; NAND gate; NOR gate; S-parameter measurements; Si-SiGe; Si/SiGe MODFET technology; logic gates; modulation doped field effect transistors; n-type Si/SiGe MODFET; voltage separation;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20040494
Filename
1305496
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