Title :
Behaviour of logic gates fabricated on Si/SiGe MODFET technology
Author :
Juncu, V.D. ; Kallfass, I. ; Sloan, R. ; Hatfield, J V
Author_Institution :
Dept. of Electr. Eng. & Electron., Univ. of Manchester Inst. of Sci. & Technol., UK
fDate :
6/10/2004 12:00:00 AM
Abstract :
The behaviour of two fabricated logic gates using n-type Si/SiGe MODFETs is reported. S-parameter measurements show that the voltage separation between states at 20 GHz is 15 dB for the NAND gate and 8 dB for the NOR gate. The measured DC levels of the outputs allow the possibility of cascading the gates for use in more complex circuits.
Keywords :
Ge-Si alloys; HEMT integrated circuits; S-parameters; elemental semiconductors; integrated logic circuits; logic gates; silicon; 15 dB; 20 GHz; 8 dB; DC levels; NAND gate; NOR gate; S-parameter measurements; Si-SiGe; Si/SiGe MODFET technology; logic gates; modulation doped field effect transistors; n-type Si/SiGe MODFET; voltage separation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20040494
