Title :
Double heterostructure and multiquantum-well lasers at 1.5-1.7 μm grown by atmospheric pressure MOVPE
Author :
Nelson, A.W. ; Moss, R.H. ; Regnault, J.C. ; Spurdens, P.C. ; Wong, Simon
Author_Institution :
British Telecom Research Laboratories, Ipswich, UK
Abstract :
The first successful growth and fabrication of GaInAs/InP MQW and CW GaInAsP DH lasers by atmospheric pressure MOVPE is reported. Room-temperature CW operation of DH lasers was obtained by using the ridge-waveguide laser design, and threshold currents as low as 53 mA were measured. MQW lasers, which also operated at room temperature, were fabricated, and emission spectra obtained from these devices showed a clear spectral narrowing compared with the DH lasers together with a wavelength shift, in good agreement with theoretical predictions.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor epitaxial layers; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; DH lasers; GaInAs/InP; GaInAsP; atmospheric pressure MOVPE; emission spectra; multiquantum-well lasers; ridge-waveguide laser design; semiconductor junction lasers; threshold currents; wavelength shift;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850233
