Title :
InGaP/InGaAs PHEMT with high IP3 for low noise applications
Author :
Lin, Y.C. ; Chang, E.Y. ; Chen, G.J. ; Lee, H.M. ; Huang, G.W. ; Biswas, D. ; Chang, C.Y.
Author_Institution :
Dept. of Mater. Sci. & Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
6/10/2004 12:00:00 AM
Abstract :
A low noise InGaP/InGaAs pseudomorphic high-electron-mobility transistor (PHEMT) with high IP3 was developed. The device utilises InGaP as the Schottky layer to achieve a low noise figure and uses AlGaAs as the spacer to reform the electron mobility and contains dual delta doped layers to improve the device linearity.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device noise; AlGaAs; InGaP-InGaAs; InGaP/InGaAs PHEMT; Schottky layer; device linearity; dual delta doped layers; low noise applications; pseudomorphic high electron mobility transistor; semiconductor device models; spacer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20040458
