Title :
InGaN-GaN MQW LEDs with Si treatment
Author :
Hsu, Y.P. ; Chang, S.J. ; Su, Y.K. ; Chen, S.C. ; Tsai, J.M. ; Lai, W.C. ; Kuo, C.H. ; Chang, C.S.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
Surface morphologies of the metal-organic chemical vapor deposition-grown p-GaN layers with and without Si treatment were investigated by atomic force microscope and scanning electron microscope. It was found that Si treatment resulted in a much rougher sample surface due to the formation of a thin SixNy layer. It was also found that forward voltage of the Si-treated InGaN-GaN light-emitting diode (LED) was slightly higher than that of conventional LED without Si treatment. However, it was also found that such Si treatment could also result in a much larger LED output intensity.
Keywords :
III-V semiconductors; MOCVD; atomic force microscopy; elemental semiconductors; gallium compounds; indium compounds; light emitting diodes; quantum well devices; rough surfaces; scanning electron microscopy; semiconductor growth; silicon; surface morphology; surface treatment; InGaN-GaN; InGaN-GaN LED; LED output intensity; MQW LED; Si; Si treatment; atomic force microscope; metal-organic chemical vapor deposition; rougher sample surface; scanning electron microscope; surface morphologies; thin SixNy layer; Atomic force microscopy; Atomic layer deposition; Chemicals; Light emitting diodes; Quantum well devices; Rough surfaces; Scanning electron microscopy; Surface morphology; Surface roughness; Surface treatment; InGaN–GaN; Si treatment; light-emitting diode (LED); multiquantum well (MQW); surface roughness;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2005.851989
