Title :
Improved high-power twin-channel laser with blocking layer
Author :
Morrison, C.B. ; Zinkiewicz, L.M. ; Burghard, A. ; Figueroa, L.
Author_Institution :
TRW Incorporated, Electro Optics Research Center, Redondo Beach, USA
Abstract :
We present an improved version of the twin-channel laser as a prototype for a new concept in semiconductor laser array structures with a well controlled far-field beam pattern. The laser device constitutes the first CW semiconductor laser array structure on a p-type GaAs substrate using current-blocking layers and yields improved current utilisation and efficiency over previous structures.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; integrated optics; semiconductor junction lasers; GaAlAs/GaAs; GaAs substrate; III-V semiconductors; current-blocking layers; far-field beam pattern; high-power CW operation; integrated optics; p-type; semiconductor laser array structures; twin-channel laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850238
