• DocumentCode
    1007767
  • Title

    Tunnelling through very low barriers

  • Author

    Gu¿¿ret, P. ; Kaufmann, U. ; Marclay, E.

  • Author_Institution
    IBM Zurich Research Laboratory, Rÿschlikon, Switzerland
  • Volume
    21
  • Issue
    8
  • fYear
    1985
  • Firstpage
    344
  • Lastpage
    346
  • Abstract
    Tunnelling through very low barriers made with GaAs/Ga1¿xAlxAs/GaAs heterostructures is investigated. The lowest barrier has a height of 40 meV and a thickness of about 450 Å. Reasonable agreement between design parameters, measured data and theoretical values is obtained.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; p-n heterojunctions; tunnelling; GaAs/Ga1-xAlxAs/GaAs heterostructures; III-V semiconductors; electron transport; tunnelling; very low barriers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19850243
  • Filename
    4251098
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1007767