Title :
Tunnelling through very low barriers
Author :
Gu¿¿ret, P. ; Kaufmann, U. ; Marclay, E.
Author_Institution :
IBM Zurich Research Laboratory, Rÿschlikon, Switzerland
Abstract :
Tunnelling through very low barriers made with GaAs/Ga1¿xAlxAs/GaAs heterostructures is investigated. The lowest barrier has a height of 40 meV and a thickness of about 450 Å. Reasonable agreement between design parameters, measured data and theoretical values is obtained.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; p-n heterojunctions; tunnelling; GaAs/Ga1-xAlxAs/GaAs heterostructures; III-V semiconductors; electron transport; tunnelling; very low barriers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850243
