Title :
Heterojunction phototransistors on n-channelled semi-insulating InP substrates
Author :
Koren, U. ; Penna, T.C. ; Tien
Author_Institution :
AT&T Bell Laboratories, Holmdel, USA
Abstract :
A new method to fabricate planar n-channelled semi-insulating (SI) InP substrate is demonstrated. Etched channels on semi-insulating substrates are filled with n-type InP crystal grown by liquid-phase epitaxy (LPE). The resulting wafers are polished again to obtain n-type channels that are periodically embedded in the semi-insulating repolished substrates. The use and application of this technique for bipolar devices on SI substrates is demonstrated by fabricating heterojunction phototransistors with LPE regrowth on these substrates.
Keywords :
III-V semiconductors; indium compounds; integrated optoelectronics; liquid phase epitaxial growth; phototransistors; semiconductor growth; substrates; III-V semiconductors; InP substrates; LPE regrowth; bipolar devices; etched channels; fabrication technique; heterojunction phototransistors; integrated optoelectronics; liquid-phase epitaxy; n-type channels; semiconductor growth; semiinsulating substrates;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850244
