DocumentCode
1007825
Title
Current/voltage characteristic of CuInSe2 homojunctions
Author
Shih, I. ; Qiu, C.X.
Author_Institution
McGill University, Electrical Engineering Department, Montreal, Canada
Volume
21
Issue
8
fYear
1985
Firstpage
350
Lastpage
351
Abstract
Temperature-dependent forward-current/voltage characteristics of In- and Bi-diffused CuInSe2 homojunctions have been investigated over a temperature range from 200 to 300 K. It has been found that the junction current in the medium voltage range was dominated by the recombination mechanism in the depletion region. The activation energy of saturation current was about 0.95 eV, which is consistent with the energy gap value of crystalline CuInSe2.
Keywords
bismuth; copper compounds; electron-hole recombination; indium; indium compounds; p-n homojunctions; semiconductor doping; ternary semiconductors; 200 to 300K; Bi dopant; CuInSe2 homojunctions; CuInSe2:Bi; CuInSe2:In; In dopant; activation energy; depletion region; forward-current/voltage characteristics; junction current; medium voltage range; recombination mechanism; saturation current; semiconductor materials; temperature dependence; transport mechanism;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19850247
Filename
4251102
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