Title :
The effect of drain bias upon frequency response in GaAs MESFETs
Author :
Curtice, Walter R.
Author_Institution :
Microwave Semicond. Corp., Somerset, NJ, USA
fDate :
8/1/1988 12:00:00 AM
Abstract :
An explanation of the degradation of the frequency response of GaAs MESFETs with drain bias based on the basis of monotonic decrease in saturation velocity at large electric field strength is presented. Device simulations made using the two-dimensional electron temperature model show the current cutoff frequency decreasing with an increase of drain-source voltage in a manner similar to that observed for laboratory devices
Keywords :
III-V semiconductors; Schottky gate field effect transistors; electric fields; frequency response; gallium arsenide; semiconductor device models; GaAs; III-V semi-conductors; MESFETs; current cutoff frequency; drain bias; drain-source voltage; frequency response; large electric field strength; saturation velocity; simulations; two-dimensional electron temperature model; Annealing; Frequency response; Gallium arsenide; MESFETs; Notice of Violation; Schottky barriers; Schottky diodes; Silicides; Temperature; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
