DocumentCode
1007830
Title
The effect of drain bias upon frequency response in GaAs MESFETs
Author
Curtice, Walter R.
Author_Institution
Microwave Semicond. Corp., Somerset, NJ, USA
Volume
35
Issue
8
fYear
1988
fDate
8/1/1988 12:00:00 AM
Firstpage
1386
Lastpage
1389
Abstract
An explanation of the degradation of the frequency response of GaAs MESFETs with drain bias based on the basis of monotonic decrease in saturation velocity at large electric field strength is presented. Device simulations made using the two-dimensional electron temperature model show the current cutoff frequency decreasing with an increase of drain-source voltage in a manner similar to that observed for laboratory devices
Keywords
III-V semiconductors; Schottky gate field effect transistors; electric fields; frequency response; gallium arsenide; semiconductor device models; GaAs; III-V semi-conductors; MESFETs; current cutoff frequency; drain bias; drain-source voltage; frequency response; large electric field strength; saturation velocity; simulations; two-dimensional electron temperature model; Annealing; Frequency response; Gallium arsenide; MESFETs; Notice of Violation; Schottky barriers; Schottky diodes; Silicides; Temperature; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.2565
Filename
2565
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