DocumentCode
1007900
Title
Directional couplers realized on silicon-on-insulator
Author
Cao, G.B. ; Gao, F. ; Jiang, J. ; Zhang, F.
Author_Institution
Shanghai Inst. of Microsyst. & Inf. Technol., Chinese Acad. of Sci., Shanghai, China
Volume
17
Issue
8
fYear
2005
Firstpage
1671
Lastpage
1673
Abstract
An asymmetrical rib configuration of directional couplers was demonstrated numerically and experimentally. With this geometry structure, the effective coupling lengths were shortened to half of the conventional ones. These new 3-dB and cross couplers were fabricated on silicon-on-insulator wafers, with the measured insertion loss 2.3 dB, nonuniformity 0.2 dB. The full vector H~ field finite edge element method was applied to the design and analysis.
Keywords
integrated optics; optical design techniques; optical directional couplers; optical losses; silicon-on-insulator; 2.3 dB; Si; asymmetric rib configuration; cross couplers; directional couplers; finite edge element method; full vector field; insertion loss; integrated optics; silicon-on-insulator; Directional couplers; Etching; Geometry; Integrated optics; Optical devices; Optical losses; Optical waveguides; Ribs; Silicon on insulator technology; Wires; Integrated optics; optical directional couplers; silicon-on-insulator (SOI);
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/LPT.2005.851959
Filename
1471771
Link To Document