Title :
Current injection tunable monolithically integrated InGaAs-InAlGaAs asymmetric Mach-Zehnder interferometer using quantum-well intermixing
Author :
Wong, H.Y. ; Tan, W.K. ; Bryce, A.C. ; Marsh, J.H. ; Arnold, J.M. ; Krysa, A. ; Sorel, M.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Glasgow, UK
Abstract :
A compact highly efficient wavelength (de)multiplexer with channel spacing of 100 GHz has been realized with a monolithically integrated asymmetric 2 × 2 Mach-Zehnder interferometer using a single step sputtered SiO2-annealing quantum-well intermixing process. Wavelength tunability and asymmetric loss rebalancing of the device is demonstrated using current injection. Wavelength tuning over 0.8 nm is achieved with only 6 mA of injected current. An extinction ratio of more than 27 dB is obtained.
Keywords :
III-V semiconductors; Mach-Zehnder interferometers; aluminium compounds; annealing; channel spacing; demultiplexing equipment; gallium arsenide; indium compounds; optical communication equipment; optical fabrication; optical tuning; semiconductor quantum wells; sputtering; 6 mA; InGaAs-InAlGaAs; InGaAs-InAlGaAs asymmetric Mach-Zehnder interferometer; asymmetric loss rebalancing; channel spacing; current injection; extinction ratio; quantum-well intermixing; sputtered SiO2-annealing; tunable monolithic integration; wavelength demultiplexer; Arm; Channel spacing; Electrooptic effects; Optical interferometry; Optical tuning; Optical waveguides; Phase shifting interferometry; Quantum well devices; Quantum wells; Wavelength division multiplexing; Asymetric Mach–Zehnder interferometer; InGaAs–InAlGaAs; carrier-induced electrooptic effect; quantum-well intermixing (QWI); wavelength-division multiplexing (WDM);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2005.851964
