Title :
2-20 GHz hybrid GaAs MESFET distributed amplifier
Author :
Venet, C. ; Baudet, P.
Author_Institution :
Laboratoire d´´Electronique et de Physique Appliquée, Limeil-Brévannes, France
Abstract :
A hybrid distributed amplifier using eight 75 μm-gate periphery GaAs MESFETs is reported. The amplifier operates in the 2-20 GHz frequency range with 6.2 dB gain ±0.4 dB gain ripple.
Keywords :
hybrid integrated circuits; microwave amplifiers; microwave integrated circuits; 2 GHz to 20 GHz; GaAs; K-band; MESFET; MESFETs; S-band; X-band; distributed amplifier; gain ripple; hybrid;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850268
