• DocumentCode
    1008073
  • Title

    High-speed and low-noise SACM avalanche photodiodes with an impact-ionization-engineered multiplication region

  • Author

    Duan, Ning ; Wang, Shuling ; Ma, Feng ; Li, Ning ; Campbell, Joe C. ; Wang, Chad ; Coldren, Larry A.

  • Author_Institution
    Univ. of Texas, Austin, TX, USA
  • Volume
    17
  • Issue
    8
  • fYear
    2005
  • Firstpage
    1719
  • Lastpage
    1721
  • Abstract
    A separate absorption, charge, and multiplication In0.53Ga0.47As-In0.52Al0.48As avalanche photodiode with an impact-ionization-engineered multiplication region is reported. By implementing an electric field gradient in the multiplication region, better control of impact-ionization can be achieved. Gain-bandwidth product of 160 GHz and excess noise factor with an equivalent k value of 0.1 are demonstrated.
  • Keywords
    aluminium compounds; avalanche photodiodes; gallium arsenide; impact ionisation; indium compounds; photodetectors; semiconductor device noise; In0.53Ga0.47As-In0.52Al0.48As; In0.53Ga0.47As-In0.52Al0.48As avalanche photodiode; SACM avalanche photodiodes; gain-bandwidth product; impact ionization; separate absorption charge multiplication; Absorption; Avalanche photodiodes; Doping; Helium; Impact ionization; Indium phosphide; Photodetectors; Silicon; Substrates; Wideband; Avalanche photodiodes (APDs); impact ionization; photodetectors;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2005.851903
  • Filename
    1471787
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1008073