Title :
High-speed and low-noise SACM avalanche photodiodes with an impact-ionization-engineered multiplication region
Author :
Duan, Ning ; Wang, Shuling ; Ma, Feng ; Li, Ning ; Campbell, Joe C. ; Wang, Chad ; Coldren, Larry A.
Author_Institution :
Univ. of Texas, Austin, TX, USA
Abstract :
A separate absorption, charge, and multiplication In0.53Ga0.47As-In0.52Al0.48As avalanche photodiode with an impact-ionization-engineered multiplication region is reported. By implementing an electric field gradient in the multiplication region, better control of impact-ionization can be achieved. Gain-bandwidth product of 160 GHz and excess noise factor with an equivalent k value of 0.1 are demonstrated.
Keywords :
aluminium compounds; avalanche photodiodes; gallium arsenide; impact ionisation; indium compounds; photodetectors; semiconductor device noise; In0.53Ga0.47As-In0.52Al0.48As; In0.53Ga0.47As-In0.52Al0.48As avalanche photodiode; SACM avalanche photodiodes; gain-bandwidth product; impact ionization; separate absorption charge multiplication; Absorption; Avalanche photodiodes; Doping; Helium; Impact ionization; Indium phosphide; Photodetectors; Silicon; Substrates; Wideband; Avalanche photodiodes (APDs); impact ionization; photodetectors;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2005.851903
