DocumentCode :
1008094
Title :
Contactless, high-speed waveform measurements on gallium arsenide ICs
Author :
Eitz, H.K. ; Blacha, A. ; Clauberg, R. ; Beha, H. ; Feder, J.
Author_Institution :
IBM Zurich Res. Lab., Switzerland
Volume :
7
Issue :
1
fYear :
1990
Firstpage :
20
Lastpage :
25
Abstract :
A setup for photoemission testing, which compares favorably with results from electron-beam testing, particularly in terms of measurement time, is presented. The photoemission sampling system described has a unique detector design and a viewer for the added convenience of the equipment operator. performance results when this technique is used to measure delay and rise times on integrated gallium arsenide MESFET circuits are reported. The switching time of these circuits is around 200 ps. The system measures electrical pulses with an 8-ps rise time, so these GaAs circuits can be tested by the system. An interesting feature for special testing is the system´s ability to activate devices within a chip by a pulsed visible light beam.<>
Keywords :
III-V semiconductors; field effect integrated circuits; gallium arsenide; integrated circuit testing; photoemission; 200 ps; 8 ps; GaAs circuits; delay; detector design; electrical pulses; electron-beam testing; equipment operator; gallium arsenide ICs; integrated gallium arsenide MESFET circuits; measurement time; photoemission sampling system; photoemission testing; pulsed visible light beam; rise time; rise times; switching time; viewer; waveform measurements; Circuit testing; Detectors; Gallium arsenide; Integrated circuit measurements; Particle measurements; Photoelectricity; Pulse measurements; Sampling methods; System testing; Time measurement;
fLanguage :
English
Journal_Title :
Design & Test of Computers, IEEE
Publisher :
ieee
ISSN :
0740-7475
Type :
jour
DOI :
10.1109/54.46890
Filename :
46890
Link To Document :
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