DocumentCode
1008098
Title
Fabrication of MOSFETs in Si/CaF2/Si heteroepitaxial structures
Author
Asano, Takashi ; Kuriyama, Yasuhiko ; Ishiwara, Hiroshi
Author_Institution
Tokyo Institute of Technology, Graduate School of Science & Engineering, Yokohama, Japan
Volume
21
Issue
9
fYear
1985
Firstpage
386
Lastpage
387
Abstract
Aluminium-gate n-channel MOSFETs have been fabricated in Si/CaF2/Si heteroepitaxial silicon-on-insulator structures. The MOSFETs were fabricated by a process including thermal oxidation in wet oxygen ambient for the formation of the gate oxide. The maximum field-effect electron mobility as high as 580 cm2/V s was obtained.
Keywords
carrier mobility; insulated gate field effect transistors; oxidation; MOSFETs; Si/CaF2/Si heteroepitaxial structures; maximum field-effect electron mobility; silicon-on-insulator structures; thermal oxidation;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19850275
Filename
4251131
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