Title :
Signal readout in a-Si:H pixel detectors
Author :
Cho, Gyuseong ; Drewery, J.S. ; Hong, W.S. ; Jing, T. ; Kaplan, S.N. ; Lee, H. ; Mireshghi, A. ; Perez-Mendez, V. ; Wildermuth, D.
Author_Institution :
Lawrence Berkeley Lab., California Univ., Berkeley, CA, USA
fDate :
8/1/1993 12:00:00 AM
Abstract :
A switch consisting of two a-Si:H p-i-n diodes was studied to read out signals from pixels for the imaging of X-ray or gamma ray distributions. A charge storage time of 20 ms and a readout time of 0.7 μs were achieved. For the detection of single ionizing particles, polysilicon thin-film-transistor amplifiers can be integrated to amplify the small signals at the pixel level before readout. Prototype polysilicon TFT amplifiers were designed and fabricated. The measured gain-bandwidth product was ~300 MHz, and the input equivalent noise charge was ~1000 electrons for a 1-μs shaping time
Keywords :
amplifiers; p-i-n diodes; position sensitive particle detectors; semiconductor counters; semiconductor switches; thin film transistors; 0.7 mus; 1 mus; 20 ms; Si:H; a-Si:H p-i-n diodes; bandwidth; charge storage time; gain; input equivalent noise charge; polysilicon thin-film-transistor amplifiers; shaping time; signal readout; switch; Charge measurement; Current measurement; Detectors; Optical imaging; P-i-n diodes; Pixel; Prototypes; Switches; Thin film transistors; X-ray imaging;
Journal_Title :
Nuclear Science, IEEE Transactions on
