Author :
Ziock, H.J. ; Boissevain, J.G. ; Holzscheiter, K. ; Kapustinsky, J.S. ; Palounek, A.P.T. ; Sondheim, W.E. ; Barberis, E. ; Cartiglia, N. ; Leslie, J. ; Pitzl, D. ; Rowe, W.A. ; Sadrozinski, H.F.-W. ; Seiden, A. ; Spencer, E. ; Wilder, M. ; Ellison, J.A. ;
Abstract :
The radiation damage resulting from the large particle fluences predicted at the Superconducting Super Collider induces significant leakage currents in Si detectors. In order to limit these currents, the detectors are operated at reduced temperatures (~0°C). Results are presented of a study of temperature effects on both the initial radiation damage and the long-term annealing of that damage in Si PIN detectors. Depletion voltage results are reported. The detectors are exposed to approximately 1014/cm2 650-MeV protons. Very pronounced temperature dependences are observed
Keywords :
annealing; p-i-n diodes; proton effects; semiconductor counters; 273 K; 650 MeV; Si PIN detectors; Si detectors; annealing; depletion voltage; leakage currents; proton irradiation; radiation damage; temperature dependences; Annealing; Capacitance measurement; Capacitance-voltage characteristics; Leak detection; Leakage current; Protons; Radiation detectors; Silicon radiation detectors; Temperature dependence; Voltage;
