Temperature dependence of radiation damage and its annealing in silicon detectors

Author

Ziock, H.J. ; Boissevain, J.G. ; Holzscheiter, K. ; Kapustinsky, J.S. ; Palounek, A.P.T. ; Sondheim, W.E. ; Barberis, E. ; Cartiglia, N. ; Leslie, J. ; Pitzl, D. ; Rowe, W.A. ; Sadrozinski, H.F.-W. ; Seiden, A. ; Spencer, E. ; Wilder, M. ; Ellison, J.A. ;

Author_Institution

Los Alamos Nat. Lab., NM, USA

Volume

40

Issue

4

fYear

1993

fDate

8/1/1993 12:00:00 AM

Firstpage

344

Lastpage

348

Abstract

The radiation damage resulting from the large particle fluences predicted at the Superconducting Super Collider induces significant leakage currents in Si detectors. In order to limit these currents, the detectors are operated at reduced temperatures (~0°C). Results are presented of a study of temperature effects on both the initial radiation damage and the long-term annealing of that damage in Si PIN detectors. Depletion voltage results are reported. The detectors are exposed to approximately 10¹⁴/cm² 650-MeV protons. Very pronounced temperature dependences are observed

Keywords

annealing; p-i-n diodes; proton effects; semiconductor counters; 273 K; 650 MeV; Si PIN detectors; Si detectors; annealing; depletion voltage; leakage currents; proton irradiation; radiation damage; temperature dependences; Annealing; Capacitance measurement; Capacitance-voltage characteristics; Leak detection; Leakage current; Protons; Radiation detectors; Silicon radiation detectors; Temperature dependence; Voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.256577

Filename

256577