Title :
High-frequency modulation of 1.52 μm vapour-phase-transported InGaAsP lasers
Author :
Bowers, John E. ; Koch, T.L. ; Hemenway, B.R. ; Wilt, D.P. ; Bridges, T.J. ; Burkhardt, E.G.
Author_Institution :
AT&T Bell Laboratories, Holmdel, USA
Abstract :
We describe modifications to the recently demonstrated vapour-phase-transported laser to reduce the parasitic capacitance by an order of magnitude, and increase the 3 dB bandwidth for CW 1.52 μm lasers to 8 GHz. The parasitic and nonlinear limitations to this bandwidth are discussed.
Keywords :
III-V semiconductors; frequency modulation; gallium arsenide; indium compounds; optical communication equipment; optical modulation; optical waveguides; semiconductor junction lasers; vapour phase epitaxial growth; 1.52 microns; 8 GHz bandwidth; CW operation; III-V semiconductors; InGaAsP; VPE; epitaxial growth; frequency modulation; high FM; nonlinear limitations; optical communication equipment; optical fibre links; parasitic capacitance reduction; semiconductor lasers; vapour-phase-transported laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850279
