DocumentCode :
1008613
Title :
The Development of an Experimental Electron-Beam-Addressed Memory Module
Author :
Kelly, John
Author_Institution :
Stanford Research Institute
Volume :
8
Issue :
2
fYear :
1975
Firstpage :
32
Lastpage :
42
Abstract :
The various technologies needed to build a successful electron-beam-addressed memory (EBAM) have been evolving for over a decade, and are now sufficiently established to build a viable, economical system. Recent work at SRI indicates that EBAM will be an important contender for low-cost, large memory systems with improved random-access capability, high reliability, and high data rates. This will be achieved in small volume and without the use of moving parts. The potential applications of such a mass memory system are widespread, ranging from direct drum and disk replacement to new systems with architectures that would take advantage of improved random access times and increased data rates.
Keywords :
Electron beams; Electrostatics; Energy consumption; Integrated circuit interconnections; Lenses; Magnetic devices; Production systems; Semiconductor devices;
fLanguage :
English
Journal_Title :
Computer
Publisher :
ieee
ISSN :
0018-9162
Type :
jour
DOI :
10.1109/C-M.1975.218864
Filename :
1649340
Link To Document :
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