Properties of CdTe(Cl) crystal used for radiation detector

Author

Shoji, T. ; Ohba, K. ; Onabe, H. ; Suehiro, T. ; Hiratate, Y.

Author_Institution

Tohoku Inst. of Technol., Sendai, Japan

Volume

40

Issue

4

fYear

1993

fDate

8/1/1993 12:00:00 AM

Firstpage

405

Lastpage

408

Abstract

A new method is described for growing CdTe crystals doped with chloride by using a radiofrequency traveling heater method (THM) which can provide excellent uniformity for the Cl atoms in the crystal. The relationship between response characteristics by γ-ray detection and crystal properties studied by photoluminescence (PL) measurements is discussed. In the RF-THM crystal sample, the emission intensity ratios between the 1.5932 eV and 1.5905 eV lines due to bound excitons from chlorine are nearly constant for all parts of one ingot. From this result, it is suggested that the Cl atoms are uniformly distributed through the whole of the crystal. Using crystals grown by this method, a large number of high-quality radiation detectors which exhibit the same characteristics can be produced from one CdTe ingot

Keywords

II-VI semiconductors; chlorine; crystal growth from melt; gamma-ray detection and measurement; impurity distribution; photoluminescence; semiconductor counters; γ-ray detection; 1.5905 eV; 1.5932 eV; CdTe(Cl) crystal; CdTe:Cl; bound excitons; crystal properties; emission intensity ratios; photoluminescence; radiofrequency traveling heater method; Atomic measurements; Cadmium; Crystalline materials; Crystals; Feeds; Radiation detectors; Radio frequency; Tellurium; Temperature; Virtual manufacturing;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.256589

Filename

256589