DocumentCode
1008759
Title
DC performance of GaAs/AlxGa1-xAs p-n-p heterojunction bipolar transistors grown by OMVPE
Author
De Lyon, T. ; Casey, H. Craig, Jr. ; Enquist, Paul M. ; Hutchby, James A.
Author_Institution
Dept. of Electr. Eng., Duke Univ., Durham, NC, USA
Volume
35
Issue
8
fYear
1988
fDate
8/1/1988 12:00:00 AM
Firstpage
1389
Lastpage
1391
Abstract
An experimental study of the current gain obtained in GaAs/AlxGa1-xAs p-n-p heterojunction bipolar transistors fabricated from organometallic vapor-phase-epitaxial (OMVPE) material is reported. The structures studied included an abrupt base-emitter junction without a base spacer layer and two other structures with a 100-Å undoped base spacer layer with either an abrupt or a linearly graded base emitter junction. Analysis of current gain in these devices indicates that surface recombination dominates the base current and that an undoped base spacer layer is not needed
Keywords
III-V semiconductors; aluminium compounds; bipolar transistors; gallium arsenide; vapour phase epitaxial growth; DC performance; GaAs-AlxGa1-xAs; OMVPE; abrupt base-emitter junction; base current; current gain; heterojunction bipolar transistors; linearly graded base emitter junction; organometallic vapour phase epitaxy; p-n-p devices; surface recombination; undoped base spacer layer; Bipolar integrated circuits; Bipolar transistor circuits; Bonding; Doping; Epitaxial growth; Fabrication; Gallium arsenide; Gold; Heterojunction bipolar transistors; Performance gain;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.2566
Filename
2566
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