• DocumentCode
    1008793
  • Title

    Fabrication of niobium-lead tunnel junctions using a self aligned masking technique

  • Author

    Jain, A.K. ; Sauvageau, J.E. ; Schwartz, D.B. ; Springer, K.T. ; Lukens, J.E.

  • Author_Institution
    State University of New York at Stony Brook, Stony Brook, NY
  • Volume
    21
  • Issue
    2
  • fYear
    1985
  • fDate
    3/1/1985 12:00:00 AM
  • Firstpage
    955
  • Lastpage
    958
  • Abstract
    The use of suspended stencils in the self aligned fabrication of niobium lead tunnel junctions has been investigated. It is shown that while all-polymer masks are unsatisfactory for this application, suspended aluminum stencils supported on polyimide can be used to make these junctions with good current-voltage characteristics. This stencil, which can be baked to at least 200°C, is made using e-beam lithography, lift off and plasma etching in oxygen. With this technique, junctions with submicron dimensions have been fabricated in a single masking step without any surface cleaning of the niobium film. The current-voltage characteristic of these junctions do not show the knee structure which is generally attributed to a contamination or damaged layer on the niobium surface.
  • Keywords
    Superconducting materials; Tunnel devices; Aluminum; Current-voltage characteristics; Fabrication; Lithography; Niobium; Plasma applications; Plasma properties; Polyimides; Surface cleaning; Surface contamination;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.1985.1063695
  • Filename
    1063695