Switching speed and bias current margin of DCL-gates composed of high-J
cjunctions are investigated by both numerical calculation and experimental measurement. It is shown that switching speed is improved by increasing J
c. However, the switching speed and bias current margin of DCL-gates are restricted by the increase in the minimum resetting current for the high-J
cjunction. The theoretical J
climit for a Nb oxide barrier junction is found to be about 7 × 10
8A/m
2from numerical results, and the J
cvalues that produce bias current margins of greater than 20 % are found by both numerical and experimental results to be less than

A/m
2. The switching delay obtained experimentally for a DCL-gate with a J
cvalue of

A/m
2is 5.6 ps, which is in good agreement with the numerical result.