Title :
Platinum intermetallic resistors for GaAs-based circuits
Author :
Tiwari, S. ; Price, W.H.
Author_Institution :
IBM Thomas J. Watson Research Center, Yorktown Heights, USA
Abstract :
A simple technique for making intermetallic resistors of sheet resistance around 25 ¿/¿ is described. The resistors were formed by reacting a 300 Å film of platinum with underlying GaAs to completion. PtGa, PtGa2 and PtAs2 phases were identified in the temperature range of 450°C to 550°C investigated. The temperature coefficient of resistivity was of the order of +9.2×10¿4°C¿1 at 25°C and the resistors appeared to be stable up to current densities of 105 A/cm2.
Keywords :
integrated circuit technology; platinum; resistors; 300 angstroms film; 450°C to 550°C; GaAs circuits; IC technology; Pt; PtAs2; PtGa; PtGa2; intermetallic resistors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850305
