DocumentCode :
1008923
Title :
Free-ion yield for tetramethylsilane and tetramethylgermanium
Author :
Hoshi, Yusuke ; Higuchi, Masanori ; Iso, H. ; Sakamoto, Makoto ; Ooyama, K. ; Yuta, H. ; Abe, K. ; Hasegawa, K. ; Suekane, F. ; Kawamura, N. ; Neichi, M. ; Suzuki, K. ; Masuda, K. ; Kikuchi, R. ; Miyano, K.
Author_Institution :
Dept. of Eng., Tohoku Gakuin Univ., Tagajo, Japan
Volume :
40
Issue :
4
fYear :
1993
fDate :
8/1/1993 12:00:00 AM
Firstpage :
532
Lastpage :
536
Abstract :
Free-ion yields from 207Bi conversion electrons are measured as a function of applied electric field in an ionization chamber filler with tetramethylsilane (TMS) or tetramethylgermanium (TMG), which are purified by simple methods. The mean thermalization length of electrons liberated in the liquid is calculated by fitting a Gaussian form for the distribution function. The total free-ion yield and thermalization length in TMS and TMG are obtained. They are 3.1±0.3, 3.5±0.2 and 1.91±12 Å, 173±16 Å, respectively, including the impurity effect in liquid
Keywords :
ionisation chambers; ionisation of liquids; 173 Å; 191 Å; 3.1 Å; 3.5 Å; 207Bi conversion electrons; TMG; TMS; distribution function; electric field; free in yield; ionization chamber; mean thermalization length; tetramethylgermanium; tetramethylsilane; Distribution functions; Electric variables measurement; Electrons; Impurities; Ionization chambers; Liquids; Physics; Probability; Spontaneous emission; Temperature sensors;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/23.256615
Filename :
256615
Link To Document :
بازگشت