Signal simulations for double-sided silicon strip detectors

Author

Leslie, J. ; Seiden, A. ; Unno, Y.

Author_Institution

Santa Cruz Inst. for Particle Phys., California Univ., CA, USA

Volume

40

Issue

4

fYear

1993

fDate

8/1/1993 12:00:00 AM

Firstpage

557

Lastpage

562

Abstract

Signals resulting from the passage of minimum ionizing charged particles through double sided Si strip detectors detectors are simulated, including the effects of Landau fluctuations and the drift of electrons and holes in the electric and magnetic fields inside the detector. Induced currents are integrated, shaped and discriminated after addition of random electrical noise, and the timing of signals is obtained. Using the results of many Monte Carlo generated events, efficiencies, position resolutions, and means are evaluated as functions of the threshold, signal-to-noise ratio, amplifier shaping time, and data storage time-window

Keywords

Monte Carlo methods; digital simulation; physics computing; position sensitive particle detectors; semiconductor counters; time measurement; Landau fluctuations; amplifier shaping time; data storage time-window; double sided Si strip detectors; efficiencies; electron drift; hole drift; means; minimum ionizing charged particles; position resolutions; signal simulation; signal-to-noise ratio; threshold; Charge carrier processes; Detectors; Fluctuations; Magnetic noise; Monte Carlo methods; Noise shaping; Signal detection; Silicon; Strips; Timing;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.256616

Filename

256616