Title :
Planar InGaAs PIN photodiode with a semi-insulating InP cap layer
Author :
Campbell, J.C. ; Dentai, A.G. ; Qua, G.J. ; Long, J. ; Riggs, V.G.
Author_Institution :
AT&T Bell Laboratories, Crawford Hill Laboratory, Holmdel, USA
Abstract :
We report a new planar InGaAs PIN photodiode structure which utilises a semi-insulating InP cap layer to achieve very low dark currents (id¿50 pA at ¿10 V, J = 5×10¿7 A/cm2).
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; photodiodes; III-V semiconductors; dark currents; planar InGaAs PIN photodiode structure; semi-insulating InP cap layer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850318
