Title :
Selectively implanted oxygen isolation technology (SIO)
Author :
Ratnam, P. ; Salama, C.A.T.
Author_Institution :
University of Toronto, Department of Electrical Engineering, Toronto, Canada
Abstract :
A new isolation technology using selectively implanted oxygen into silicon is presented. The technique offers a five-fold reduction in the bird´s beak as compared to the standard LOCOS process. Good interface characteristics are observed for the implanted oxide as well as for the active oxide grown between the implanted oxide regions. Electrical characteristics of n+/p diodes isolated by the implanted oxide are found to be comparable to that of LOCOS diodes.
Keywords :
VLSI; integrated circuit technology; active oxide; bird´s beak; implanted oxide; interface characteristics; isolation technology; n+/p diodes; selectively implanted oxygen;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850319
