Title :
Nonequilibrium devices for infra-red detection
Author :
Ashley, T. ; Elliott, C.T.
Author_Institution :
Royal Signals & Radar Establishment, Malvern, UK
Abstract :
To increase the operating temperature of long-wavelength infra-red detectors it is proposed that narrow-gap semiconductor devices be operated in a nonequilibrium mode such that the carrier densities are held below their equilibrium, near-intrinsic, levels. The possible use of exclusion in photo-conductors and extraction in photodiodes is discussed, and experimental results are shown for the former.
Keywords :
infrared detectors; photodiodes; IR detectors; carrier densities; exclusion; extraction; infra-red detection; narrow-gap semiconductor devices; nonequilibrium mode; operating temperature; photodiodes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850321
